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| SMD Type NPN Silicon Epitaxia 2SD2403 Transistors Features High current capacitance. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Base current Base current (pulse) * Total power dissipation Junction temperature Storage temperature * PW 10 ms, duty cycle 50 % Symbol VCBO VCEO VEBO IC ICP IB IBP PT Tj Tstg Rating 80 60 6 3 5 0.2 0.4 2 150 -55 to +150 Unit V V V A A A A W www.kexin.com.cn 1 SMD Type 2SD2403 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Base to emitter voltage * Collector saturation voltage Base saturation voltage Gain bandwidth product Output capacitance Turn-on time Storage time Fall time Symbol ICBO IEBO hFE 1 hFE 2 VBE Testconditons VCB = 80 V, IE = 0 VEB = 6.0 V, IC = 0 VCE = 2.0 V, IC =0.1 A VCE = 2.0 V, IC = 1.0 A VCE = 2.0 V, IC = 0.1 A Transistors Min Typ Max 100 100 Unit nA nA 80 100 630 200 670 150 210 0.89 130 30 150 652 40 400 730 300 500 1.2 mV mV mV V MHz pF ns ns ns VCE(sat) 1 IC = 2 A, IB = 0.1 A VCE(sat) 2 IC = 3 A, IB = 0.15 A VBE(sat) IC = 2 A, IB = 0.1 A fT Cob ton tstg tf VCE = 10 V, IE = -0.3 A VCB = 10 V, IE = 0 , f = 1.0 MHz IC = 1.0 A, VCC= 10 V IB1 = -IB2 = 0.1 A RL = 5.0U hFE Classification Marking hFE GX 100 200 GY 160 320 GZ 200 400 2 www.kexin.com.cn |
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